A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
نویسندگان
چکیده
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ژورنال
عنوان ژورنال: Micromachines
سال: 2021
ISSN: 2072-666X
DOI: 10.3390/mi12050488